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Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at  Low Current Density

Frontiers Efficiency Boosting by Thermal Harvesting in InGaN/GaN Light-Emitting Diodes

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Significant Quantum Efficiency Enhancement of InGaN Red Micro-Light-Emitting Diodes with a Peak External Quantum Efficiency of up to 6%

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Facebook Patent Current aperture in micro-led through stress relaxation - Nweon Patent

AlN passivation for InGaN micro-LEDs

InGaN Nanowires Make Light Mixing Efficient and Smart — LED professional - LED Lighting Technology, Application Magazine

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

a) Wavelength as a function of current of red μ-LEDs of different

630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays

Experimental EQE versus injection current density for LED with varying

Micromachines, Free Full-Text